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2SK3475TE12LF

Part Number: 2SK3475TE12LF
SKU: 318980
Manufacturer: Toshiba
Description: RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 1825 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Toshiba
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 1 A
Vds - Drain-Source Breakdown Voltage 20 V
Operating Frequency 520 MHz
Gain 14.9 dB
Output Power 630 mW
Mounting Type Style SMD/SMT
Package Shape PW-Mini-3
Package Style Reel
Brand Toshiba
Configuration Single
Power Dissipation 3 W
Product Type RF MOSFET Transistors
Series 2SK3475
Standard Pack Quantity 1000
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Vgs th - Gate-Source Threshold Voltage 2.4 V
USHTS 8541210075
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Products specifications
Manufacturer(MFG) Toshiba
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 1 A
Vds - Drain-Source Breakdown Voltage 20 V
Operating Frequency 520 MHz
Gain 14.9 dB
Output Power 630 mW
Mounting Type Style SMD/SMT
Package Shape PW-Mini-3
Package Style Reel
Brand Toshiba
Configuration Single
Power Dissipation 3 W
Product Type RF MOSFET Transistors
Series 2SK3475
Standard Pack Quantity 1000
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Vgs th - Gate-Source Threshold Voltage 2.4 V
USHTS 8541210075
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