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Part Number: RFM00U7U(TE85L,F)
SKU: 340412
Manufacturer: Toshiba
Description: RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 0.1A 0.25W 20V
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 80477 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Toshiba
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 100 mA
Vds - Drain-Source Breakdown Voltage 20 V
Operating Frequency 520 MHz
Gain 13 dB
Output Power 200 mW
Mounting Type Style SMD/SMT
Package Shape SOT-343-4
Package Style Reel
Brand Toshiba
Configuration Dual
Power Dissipation 250 mW
Product Type RF MOSFET Transistors
Series RFM00
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Vgs th - Gate-Source Threshold Voltage 1.3 V
USHTS 8541210075
Products specifications
Manufacturer(MFG) Toshiba
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 100 mA
Vds - Drain-Source Breakdown Voltage 20 V
Operating Frequency 520 MHz
Gain 13 dB
Output Power 200 mW
Mounting Type Style SMD/SMT
Package Shape SOT-343-4
Package Style Reel
Brand Toshiba
Configuration Dual
Power Dissipation 250 mW
Product Type RF MOSFET Transistors
Series RFM00
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Vgs th - Gate-Source Threshold Voltage 1.3 V
USHTS 8541210075
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