0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

RFM03U3CT(TE12L)

Part Number: RFM03U3CT(TE12L)
SKU: 338951
Manufacturer: Toshiba
Description: RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 2.5A 7W 16V
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 10050 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Toshiba RFM03U3CT(TE12L) is available at WIN SOURCE. Please review product page below for detailed information, including RFM03U3CT(TE12L) price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RFM03U3CT(TE12L) to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
Manufacturer(MFG) Toshiba
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 2.5 A
Vds - Drain-Source Breakdown Voltage 16 V
Operating Frequency 520 MHz
Gain 14.8 dB
Output Power 3 W
Mounting Type Style SMD/SMT
Package/Case RF-CST-3
Package Style Reel
Brand Toshiba
Configuration Single
Power Dissipation 7 W
Product Type RF MOSFET Transistors
Series RFM03
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 3 V
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
MXHTS 85412101
ECCN EAR99
Vgs th - Gate-Source Threshold Voltage 0.6 V
TARIC 8541210000
  • RFM03U3CT(TE12L) Price
  • RFM0 Series
  • RFM03U3CT(TE12L) Datasheet
  • RFM03U3CT(TE12L) Application
  • RFM03U3CT(TE12L) Pdf
  • RFM03U3CT(TE12L) Pinout
  • RFM03U3CT(TE12L) Image
  • RFM03U3CT(TE12L) Picture
  • RFM03U3CT(TE12L) In Stock
  • RFM03U3CT(TE12L) Distributor
  • RFM03U3CT(TE12L) RF MOSFET Transistors
  • RFM03U3CT(TE12L) Toshiba
Products specifications
Manufacturer(MFG) Toshiba
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 2.5 A
Vds - Drain-Source Breakdown Voltage 16 V
Operating Frequency 520 MHz
Gain 14.8 dB
Output Power 3 W
Mounting Type Style SMD/SMT
Package/Case RF-CST-3
Package Style Reel
Brand Toshiba
Configuration Single
Power Dissipation 7 W
Product Type RF MOSFET Transistors
Series RFM03
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 3 V
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
MXHTS 85412101
ECCN EAR99
Vgs th - Gate-Source Threshold Voltage 0.6 V
TARIC 8541210000
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display