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Part Number: CGH40025F
SKU: 122528
Manufacturer: Wolfspeed
Description: RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt
Rohs State: Need to verify
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Availability: 71538 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Wolfspeed
Part Category RF JFET Transistors
RoHS RoHS Compliance
Transistor Type HEMT
Technology GaN
Operating Frequency 2 GHz to 6 GHz
Gain 15 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 120 V
Vgs - Gate-Source Breakdown Voltage - 10 V to 2 V
Id - Continuous Drain Current 3 A
Output Power 30 W
Maximum Drain Gate Voltage -
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 150 C
Power Dissipation -
Mounting Type Style Screw Mount
Package Shape 440166
Package Style Tray
Application -
Brand Wolfspeed
Class -
Configuration Single
Development Kit CGH40025F-TB
Fall Time -
Forward Transconductance - Min -
Gate-Source Cutoff Voltage -
Height 3.43 mm
Length 14.09 mm
NF - Noise Figure -
Operating Temperature Range -
P1dB - Compression Point -
Product GaN HEMT
Product Type RF JFET Transistors
Rds On - Drain-Source Resistance -
Rise Time -
Standard Pack Quantity 1
Product Group Transistors
Typical Turn-Off Delay Time -
Vgs th - Gate-Source Threshold Voltage - 3 V
Width 4.19 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 854239099
KRHTS 8541299000
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
Per Pcs Weight 0.652216 oz
USHTS 8541290075
Products specifications
Manufacturer(MFG) Wolfspeed
Part Category RF JFET Transistors
RoHS RoHS Compliance
Transistor Type HEMT
Technology GaN
Operating Frequency 2 GHz to 6 GHz
Gain 15 dB
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 120 V
Vgs - Gate-Source Breakdown Voltage - 10 V to 2 V
Id - Continuous Drain Current 3 A
Output Power 30 W
Maximum Drain Gate Voltage -
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 150 C
Power Dissipation -
Mounting Type Style Screw Mount
Package Shape 440166
Package Style Tray
Application -
Brand Wolfspeed
Class -
Configuration Single
Development Kit CGH40025F-TB
Fall Time -
Forward Transconductance - Min -
Gate-Source Cutoff Voltage -
Height 3.43 mm
Length 14.09 mm
NF - Noise Figure -
Operating Temperature Range -
P1dB - Compression Point -
Product GaN HEMT
Product Type RF JFET Transistors
Rds On - Drain-Source Resistance -
Rise Time -
Standard Pack Quantity 1
Product Group Transistors
Typical Turn-Off Delay Time -
Vgs th - Gate-Source Threshold Voltage - 3 V
Width 4.19 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 854239099
KRHTS 8541299000
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
Per Pcs Weight 0.652216 oz
USHTS 8541290075
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