MRF6S9060NBR1

Part Number: MRF6S9060NBR1

SKU: 266227

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors HV6 60W TO272-2N FET

Rohs State: Need to verify

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Availability: 81524 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	68 V
Operating Frequency	1 GHz
Gain	21.4 dB
Output Power	14 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package/Case	TO-272-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	2.64 mm
Length	23.67 mm
Power Dissipation	227 W
Product Type	RF MOSFET Transistors
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage	3 V
USHTS	8541290075
Width	6.4 mm
TARIC	8541290000

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Vds - Drain-Source Breakdown Voltage	68 V
Operating Frequency	1 GHz
Gain	21.4 dB
Output Power	14 W
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package/Case	TO-272-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Height	2.64 mm
Length	23.67 mm
Power Dissipation	227 W
Product Type	RF MOSFET Transistors
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage	3 V
USHTS	8541290075
Width	6.4 mm
TARIC	8541290000

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